CENELEC EN 60749-44 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
Данный раздел/документ содержится в продуктах:
- Техэксперт: Машиностроительный комплекс
- Картотека зарубежных и международных стандартов
- CENELEC EN 60749-21 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
- 31
- IEC 60747-2 Semiconductor Devices - Discrete Devices and Integrated Circuits Part 2: Rectifier Diodes - Edition 2.0
- BSI BS EN 60749-34 Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling
- IEC 60749-23 Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life - Edition 1.1 Consolidated Reprint
- BSI BS EN 60749-34 Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling
- BSI BS EN 60749-34 Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling
- IEC 60749-23 Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life - Edition 1.1 Consolidated Reprint
- IEC 60749-23 Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life - Edition 1.1 Consolidated Reprint
- CENELEC EN 60749-34 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
- IEC 60749-3 CORR 1 SEMICONDUCTOR DEVICES – MECHANICAL AND CLIMATIC TEST METHODS – Part 3: External visual examination CORRIGENDUM 1 - Edition 1.0
- IEC 60747-5-6 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes - Edition 1.0
- IEC 60749-38 Semiconductor devices – Mechanical and climatic test methods – Part 38: Soft error test method for semiconductor devices with memory - Edition 1.0
- Картотека зарубежных и международных стандартов
European Committee for Electrotechnical Standardization
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
N EN 60749-44
Annotation
This part of IEC 60749 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
NOTE 1 Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4 [2].
NOTE 2 In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5 [3].
Автоматический перевод:
Полупроводниковые устройства - Механические и климатические методы испытаний - Часть 44: Нейтронный луч облучил метод испытаний единственного эффекта событий (SEE) для полупроводниковых устройств
Эта часть IEC 60749 устанавливает порядок для измерения единственных эффектов события (SEEs) на полупроводниковых устройствах интегральной схемы высокой плотности включая возможность хранения данных полупроводниковых устройств с памятью, когда подвергнуто атмосферному нейтронному излучению, произведенному космическими лучами. Единственная чувствительность эффектов события измеряется, в то время как устройство облучается в нейтронном луче известного потока. Этот метод тестирования может быть применен к любому типу интегральной схемы.
