International Electrotechnical Commission

Semiconductor devices – Discrete devices – Part 8: Field-effect transistors - Edition 3.0
 N 60747-8

Annotation

This part of IEC 60747 gives standards for the following categories of field-effect transistors:

– type A: junction-gate type;

– type B: insulated-gate depletion (normally on) type;

– type C: insulated-gate enhancement (normally off) type.

NOTE 1 Schottky barrier-gate and insulated gate devices include depletion type devices and enhancement type devices.

NOTE 2 MOSFETs for some applications may not have inverse diode characteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling diode.

NOTE 3 The graphical symbol only for type C is used in this standard. The standard equally applies for P-channel and for type A and B devices.

Автоматический перевод:

Полупроводниковые устройства – Дискретные устройства – Часть 8: Канальные транзисторы - Выпуск 3.0

Эта часть IEC 60747 дает стандарты для следующих категорий канальных транзисторов: