International Electrotechnical Commission

Semiconductor devices – Micro-electromechanical devices – Part 25: Silicon based MEMS fabrication technology – Measurement method of pull-press and shearing strength of micro bonding area - Edition 1.0
 N 62047-25

Annotation

This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS).

This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical support of the movable sensing/actuating functional components in MEMS devices. With the devices scaling, the bonding strength degradation, induced by defects, contaminations and thermal mismatch stress on bonding surface, becomes severer. This standard specifies an insitu testing method of the pull-press and shearing strength based on a patterned technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially.

Since the testing structure in this standard can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication foundry can give some quantitative reference for the designer.

Автоматический перевод:

Полупроводниковые устройства – Микроэлектромеханические устройства – Часть 25: Кремний базируемая технология производства MEMS – Измерительный метод пресса напряжения и сила стрижки микро контактной площадки - Издание 1.0