ASTM E1162 Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Данный раздел/документ содержится в продуктах:
- Техэксперт: Машиностроительный комплекс
- Картотека зарубежных и международных стандартов
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- 71
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- 71.040
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- 71.040.40
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- ISO 18115-1 Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- 01
- ISO 18115-1 Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- ISO 18115-1 Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy - First Edition
- ISO 16531 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS - First Edition
- ISO 14606 Surface chemical analysis - Sputter depth profiling - Optimization using layered systems as reference materials - Second edition
- ASTM E1127 Standard Guide for Depth Profiling in Auger Electron Spectroscopy
- ASTM E1636 Standard Practice for Analytically Describing Depth-Profile and Linescan-Profile Data by an Extended Logistic Function
- ISO 14606 Surface Chemical Analysis - Sputter Depth Profiling - Optimization Using Layered Systems as Reference Materials - First Edition
- Картотека зарубежных и международных стандартов
ASTM International
Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
N E1162
Annotation
This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).2
Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2 The boldface numbers in parentheses refer to the references at the end of this standard.
Автоматический перевод:
Общепринятая практика для создания отчетов о данных о профиле глубины распылителя во Вторичной масс-спектрометрии иона (SIMS)



