CENELEC EN 62047-9 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
Данный раздел/документ содержится в продуктах:
- Техэксперт: Машиностроительный комплекс
- Картотека зарубежных и международных стандартов
- IEC 62047-15 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass - Edition 1.0
- 31
- IEC 62047-15 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass - Edition 1.0
- 31.080
- IEC 62047-15 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass - Edition 1.0
- 31.080.99
- IEC 62047-15 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass - Edition 1.0
- IEC 62047-9 Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS - Edition 1.0
- IEC 62047-4 Semiconductor devices – Micro-electromechanical devices – Part 4: Generic specification for MEMS - Edition 1.0
- IEC 62047-4 Semiconductor devices – Micro-electromechanical devices – Part 4: Generic specification for MEMS - Edition 1.0
- IEC 62047-9 CORR 1 Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS - Edition 1.0
- CENELEC EN 62047-15 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
- CENELEC EN 62047-9 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- BSI BS EN 62047-15 Semiconductor devices — Micro-electromechanical devices Part 15: Test method of bonding strength between PDMS and glass
- Картотека зарубежных и международных стандартов
European Committee for Electrotechnical Standardization
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
N EN 62047-9
Annotation
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 m to several millimeters.
Автоматический перевод:
Полупроводниковые устройства - Микроэлектромеханические устройства - Часть 9: Пластина к слоистому измерению прочности сцепления для MEMS
Этот стандарт описывает метод измерения прочности сцепления пластины к слоистому связыванию, типу термокомпрессии, такой как кремний к кремниевому связыванию сплава, кремний к стеклянному анодному связыванию, и т.д., и применимый размер структуры во время обработки/блока MEMS. Применимая слоистая толщина находится в диапазоне 10 m к нескольким миллиметрам.
