DLA SMD-5962-07241 REV A MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
Данный раздел/документ содержится в продуктах:
- Техэксперт: Машиностроительный комплекс
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- ASTM D257 Standard Test Methods for DC Resistance or Conductance of Insulating Materials
- ASTM F79 Standard Specification for Type 101 Sealing Glass
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CC - DLA Land and Maritime
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
N SMD-5962-07241 REV A
Annotation
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
Автоматический перевод:
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 В), MONOLITHIC SILICON
Этот рисунок документы два уровня класса гарантии продукта, состоящие из высокой надежности (класс Q устройства) и космическое применение (класс V устройства). Выбор основ случая и ведущих концов доступен и отражен в Числе Части или Идентификации (PIN). Когда доступно, выбор уровней Радиационной гарантии твердости (RHA) отражены в PIN.
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