ASTM International

Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
 N E1249

Annotation

This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices.

NOTE 1—This absorbed-dose testing is sometimes called "total dose testing" to distinguish it from "dose rate testing."

NOTE 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing.

The principal potential error for the measurement of absorbed dose in electronic devices arises from nonequilibrium energy deposition effects in the vicinity of material interfaces.

Information is given about absorbed-dose enhancement effects in the vicinity of material interfaces. The sensitivity of such effects to low energy components in the Co-60 photon energy spectrum is emphasized.

A brief description is given of typical Co-60 sources with special emphasis on the presence of low energy components in the photon energy spectrum output from such sources.

Procedures are given for minimizing the low energy components of the photon energy spectrum from Co-60 sources, using filtration. The use of a filter box to achieve such filtration is recommended.