ASTM International

Standard Guide for Use of an X-Ray Tester (? 10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
 N F1467

Annotation

This guide covers recommended procedures for the use of X-ray testers (that is, sources with a photon spectrum having '10 keV mean photon energy and '50 keV maximum energy) in testing semiconductor discrete devices and integrated circuits for effects from ionizing radiation.

The X-ray tester may be appropriate for investigating the susceptibility of wafer level or delidded microelectronic devices to ionizing radiation effects. It is not appropriate for investigating other radiation-induced effects such as singleevent effects (SEE) or effects due to displacement damage.

This guide focuses on radiation effects in metal oxide semiconductor (MOS) circuit elements, either designed (as in MOS transistors) or parasitic (as in parasitic MOS elements in bipolar transistors).

Information is given about appropriate comparison of ionizing radiation hardness results obtained with an X-ray tester to those results obtained with cobalt-60 gamma irradiation. Several differences in radiation-induced effects caused by differences in the photon energies of the X-ray and cobalt-60 gamma sources are evaluated. Quantitative estimates of the magnitude of these differences in effects, and other factors that should be considered in setting up test protocols, are presented.

If a 10-keV X-ray tester is to be used for qualification testing or lot acceptance testing, it is recommended that such tests be supported by cross checking with cobalt-60 gamma irradiations.

Comparisons of ionizing radiation hardness results obtained with an X-ray tester with results obtained with a LINAC, with protons, etc. are outside the scope of this guide.